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Infineon Technologies AG |
HiRel Ku-Band GaAs General Purpose MESFET
CFY27
• HiRel Discrete and Microwave Semiconductor
• For professional pre- and driver-amplifiers
• For frequencies from 500 MHz to 20 GHz
• Hermetically sealed microwave package
• High gain, medium power
• Component Under Development
• Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 06 and 07 foreseen (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY27-38 (ql)
CFY27-P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY27-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62703F121
on request
on request
on request
Semiconductor Group
1 of 9
Draft D, September 99
Maximum Ratings
CFY27
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band 1)
Junction temperature
Storage temperature range
Total power dissipation 2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Symbol
VDS
VDG
VGS
ID
IG
PRF,in
TJ
Tstg
Ptot
Tsol
Values
9
11
- 6... + 0.5
420
5
+ 20 (tbc.)
175
- 65... + 175
900
230
Rth JS
≤ 150 (tbc.)
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
K/W
Notes.:
1) For VDS ≤ 5 V. For VDS > 5 V, derating is required.
2) At TS = + 40 °C. For TS > + 40 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 9
Draft D, September 99
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