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PDF 2SK3132 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3132 | |
| Descripción | Chopper Regulator DC-DC Converter | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3132
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3132
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.)
l High forward transfer admittance : |Yfs| = 33 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancement−mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DCDrain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
50
200
250
525
50
25
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.5 °C / W
35.7 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
www.DataSheet.in
1 2002-01-25
1 page  
2SK3132
www.DataSheet.in
RG = 25 Ω
VDD = 90 V, L = 357 µH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
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ø
5 2002-01-25
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3132.PDF ] | |
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