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PDF TPC8212-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8212-H | |
| Descripción | High-Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8212-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8212-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: QSW = 5.5 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.)
• High forward transfer admittance: |Yfs| =14 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single-pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD 2)
EAS
IAR
EAR
Tch
Tstg
30
30
±20
6
24
1.5
1.1
0.75
0.45
46.8
6
0.10
150
−55～150
V
V
V
A
W
W
mJ
A
mJ
℃
℃
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-16
1 page  
50
Common source
Pulse test
40
RDS (ON) – Ta
ID = 1.5A,3A,6A
30
20 VGS = 4.5 V
10 VGS = 10 V
ID = 1.5A,3A,6A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8212-H
www.DataSheet4U.com
100
Common source
Ta = 25°C
Pulse test
IDR – VDS
10
10
3
4.5
1
VGS = 0 V
1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
2.0
1.5
1.0
Common source
VDS = 10 V
0.5 ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
1.6 (1)
1.2 (2)
PD – Ta
Device mounted on a Glass-epoxy board (a)(Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation(Note 3b)
Device mounted on a glass-epoxy board(b)(Note 2b)
(3)Single-device operation(Note 3a)
(4)Single-device value at dual operation(Note 3b)
t=10s
0.8 (3)
(4)
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
5
Dynamic input/output
characteristics
50 20
40
30
VDS
20
10
VDD = 6 V
VGS
12
24
Common source
ID = 6 A
Ta = 25°C
Pulse test
16
12
8
4
00
0 6 12 18 24 30
Total Gate charge Qg (nC)
2006-11-16
5 Page | ||
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| PDF Descargar | [ Datasheet TPC8212-H.PDF ] | |
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