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PDF TPC8116-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8116-H | |
| Descripción | High Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8116-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8116-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
Unit: mm
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 9.7 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 24mΩ (typ.)
• High forward transfer admittance: |Yfs| =14 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −40 V)
• Enhancement mode: Vth =−0.8 to−2.0 V (VDS =−10 V, ID =−1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−40
−40
±20
−7.5
−30
1.9
1.0
26
−7.5
0.12
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
1 2006-01-17
1 page  
RDS (ON) – Ta
50
Common source
Pulse test
40
−3.8
ID = −7.5 A
−1.9
30
VGS = −4.5 V
20
−10 V
10
ID = −1.9/−3.8/−7.5A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8116-H
www.DataSheet4U.com
−100
Common source
Ta = 25°C
Pulse test
IDR – VDS
−10 −4.5 −3
−10
−1
−0.1
0
−1 VGS = 0 V
0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V)
1.2
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
−1
Crss
−10 −100
Drain-source voltage VDS (V)
Vth – Ta
−2.0
−1.6
−1.2
−0.8
−0.4
Common source
VDS = −10 V
ID = −1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.0
(1)
1.6
1.2
0.8 (2)
PD – Ta
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
ｔ＝10s
0.4
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−50
Common source
ID = −7.5 A
Ta = 25°C
−40 Pulse test
VDS
−30
−20
−16
−8
VDD = −32 V
VGS
−10
−20
−16
−12
−8
−4
00
0 10 20 30 40 50
Total gate charge Qg (nC)
5 2006-01-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8116-H.PDF ] | |
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