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PDF MC100E446 Data sheet ( Hoja de datos )
| Número de pieza | MC100E446 | |
| Descripción | 4-BIT PARALLEL/ SERIAL CONVERTER | |
| Fabricantes | ON Semiconductor | |
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MC10E446, MC100E446
5V ECL 4-Bit Parallel/Serial
Converter
Description
The MC10E/100E446 is an integrated 4-bit parallel to serial data
converter. The device is designed to operate for NRZ data rates of up to
1.3 Gb/s. The chip generates a divide by 4 and a divide by 8 clock for
both 4-bit conversion and a two chip 8-bit conversion function. The
conversion sequence was chosen to convert the parallel data into a serial
stream from bit D0 to D3. A serial input is provided to cascade two
E446 devices for 8 bit conversion applications. Note that the serial
output data clocks off of the negative input clock transition.
The SYNC input will asynchronously reset the internal clock
circuitry. This pin allows the user to reset the internal clock conversion
unit and thus select the start of the conversion process.
The MODE input is used to select the conversion mode of the device.
With the MODE input LOW, or open, the device will function as a 4-bit
converter. When the mode input is driven HIGH the internal load clock
will change on every eighth clock cycle thus allowing for an 8-bit
conversion scheme using two E446’s. When cascaded in an 8-bit
conversion scheme the devices will not operate at the 1.3 Gb/s data rate
of a single device. Refer to the applications section of this data sheet for
more information on cascading the E446.
The VBB pin, an internally generated voltage supply, is available to
this device only. For single-ended input conditions, the unused
differential input is connected to VBB as a switching reference voltage.
VBB may also rebias AC coupled inputs. When used, decouple VBB and
VCC via a 0.01 mF capacitor and limit current sourcing or sinking to
0.5 mA. When not used, VBB should be left open.
The 100 Series contains temperature compensation.
Features
http://onsemi.com
PLCC−28
FN SUFFIX
CASE 776
MARKING DIAGRAM*
1 28
MCxxxE446FNG
AWLYYWW
xxx = 10 or 100
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
*For additional marking information, refer to
Application Note AND8002/D.
• On Chip Clock ÷4 and ÷8
• 1.5 Gb/s Typical Data Rate Capability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
• Differential Clock and Serial Inputs
• VBB Output for Single-ended Input Applications
• Asynchronous Data Synchronization
• Mode Select to Expand to 8 Bits
• PECL Mode Operating Range: VCC = 4.2 V to 5.7 V
with VEE = 0 V
• NECL Mode Operating Range: VCC = 0 V
with VEE = −4.2 V to −5.7 V
• Internal Input 50 kW Pulldown Resistors
• ESD Protection: Human Body Model; > 2 kV,
Machine Model; > 100 V
• Meets or Exceeds JEDEC Spec EIA/JESD78 IC
Latchup Test
• Flammability Rating: UL 94 V−0 @ 0.125 in,
Oxygen Index: 28 to 34
• Transistor Count = 525 devices
• Moisture Sensitivity Level: Pb = 1; Pb−Free = 3
For Additional Information, see Application Note
AND8003/D
• Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 8
1
Publication Order Number:
MC10E446/D
1 page  
MC10E446, MC100E446
Table 4. 10E SERIES PECL DC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V (Note 1)
0°C 25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE Power Supply Current
126 151
126 151
126 151 mA
VOH Output HIGH Voltage (Note 2)
3980 4070 4160 4020 4105 4190 4090 4185 4280 mV
VOHSOUT
VOL
Output HIGH Voltage SOUT/SOUT
Output LOW Voltage (Note 2)
3980
3050
3210
4210
3370
4020
3050
3210
4240
3370
4090
3050
3227
4330
3405
mV
mV
VIH Input HIGH Voltage
3830 3995 4160 3870 4030 4190 3940 4110 4280 mV
VIL Input LOW Voltage
3050 3285 3520 3050 3285 3520 3050 3302 3555 mV
VBB Output Voltage Reference
3.62 3.74 3.65 3.75 3.69 3.81 V
IIH Input HIGH Current
150 150 150 mA
IIL Input LOW Current
0.5 0.3
0.5 0.25
0.3 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.06 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 5. 10E SERIES NECL DC CHARACTERISTICS VCCx = 0.0 V; VEE = −5.0 V (Note 3)
0°C 25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE Power Supply Current
126 151
126 151
126 151 mA
VOH Output HIGH Voltage (Note 4)
−1020 −930 −840 −980 −895 −810 −910 −815 −720 mV
VOHSOUT Output HIGH Voltage SOUT/SOUT −1020
−790 −980
−760 −910
−670 mV
VOL Output LOW Voltage (Note 4)
−1950 −1790 −1630 −1950 −1790 −1630 −1950 −1773 −1595 mV
VIH Input HIGH Voltage
−1170 −1005 −840 −1130 −970 −810 −1060 −890 −720 mV
VIL Input LOW Voltage
−1950 −1715 −1480 −1950 −1715 −1480 −1950 −1698 −1445 mV
VBB Output Voltage Reference
−1.38
−1.27 −1.35
−1.25 −1.31
−1.19 V
IIH Input HIGH Current
150 150 150 mA
IIL Input LOW Current
0.5 0.3
0.5 0.065
0.3 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.06 V.
4. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
http://onsemi.com
5
5 Page 
MC10E446, MC100E446
PACKAGE DIMENSIONS
PLCC−28
FN SUFFIX
PLASTIC PLCC PACKAGE
CASE 776−02
ISSUE E
−N− Y BRK
D
B 0.007 (0.180) M T L−M S N S
U 0.007 (0.180) M T L−M S N S
Z
−L− −M−
WD
28 1 V
X
VIEW D−D
G1 0.010 (0.250) S T L−M S N S
Z
A 0.007 (0.180) M T L−M S N S
H 0.007 (0.180) M T L−M S N S
R 0.007 (0.180) M T L−M S N S
CE
0.004 (0.100)
G
J
−T− SEATING
PLANE
G1 VIEW S
0.010 (0.250) S T L−M S N S
K1
K
F
VIEW S
0.007 (0.180) M T L−M S N S
NOTES:
1. DATUMS −L−, −M−, AND −N− DETERMINED
WHERE TOP OF LEAD SHOULDER EXITS
PLASTIC BODY AT MOLD PARTING LINE.
2. DIMENSION G1, TRUE POSITION TO BE
MEASURED AT DATUM −T−, SEATING PLANE.
3. DIMENSIONS R AND U DO NOT INCLUDE
MOLD FLASH. ALLOWABLE MOLD FLASH IS
0.010 (0.250) PER SIDE.
4. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN
THE PACKAGE BOTTOM BY UP TO 0.012
(0.300). DIMENSIONS R AND U ARE
DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUDING ANY MISMATCH
BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037
(0.940). THE DAMBAR INTRUSION(S) SHALL
NOT CAUSE THE H DIMENSION TO BE
SMALLER THAN 0.025 (0.635).
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.485 0.495 12.32 12.57
B 0.485 0.495 12.32 12.57
C 0.165 0.180 4.20 4.57
E 0.090 0.110 2.29 2.79
F 0.013 0.019 0.33 0.48
G 0.050 BSC
1.27 BSC
H 0.026 0.032 0.66 0.81
J 0.020 −−− 0.51 −−−
K 0.025 −−− 0.64 −−−
R 0.450 0.456 11.43 11.58
U 0.450 0.456 11.43 11.58
V 0.042 0.048 1.07 1.21
W 0.042 0.048 1.07 1.21
X 0.042 0.056 1.07 1.42
Y −−− 0.020 −−− 0.50
Z 2 _ 10_ 2 _ 10_
G1 0.410 0.430 10.42 10.92
K1 0.040 −−− 1.02 −−−
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MC100E446.PDF ] | |
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