K6X1008T2D-Q 판매점 - 128Kx8 bit Low Power CMOS Static RAM

K6X1008T2D-Q 반도체 회로 부품 판매점

128Kx8 bit Low Power CMOS Static RAM

Samsung semiconductor

K6X1008T2D Family

Document Title

128Kx8 bit Low Power CMOS Static RAM

CMOS SRAM

Revision History

Revision No. History

0.0 Initial draft

Draft Data

July 15, 2002

Remark

Preliminary

0.1 Revised

December 4, 2002

Preliminary

- Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.

- Added Commercial product.

- Added 55ns product( Vcc = 3.0V~3.6V)

0.2 Revised

- Added Lead Free 32-SOP-525 Product

- Added Lead Free 32-TSOP1-0820F Product

June 23, 2003

Preliminary

1.0 Finalized

- Changed ICC from 3mA to 2mA

- Changed ICC2 from 25mA to 20mA

- Changed ISB1(Commercial) from 10µA to 6µA

- Changed ISB1(industrial) from 10µA to 6µA

- Changed ISB1(Automotive) from 20µA to 10µA

- Changed IDR(Commercial) from 10µA to 6µA

- Changed IDR(industrial) from 10µA to 6µA

- Changed IDR(Automotive) from 20µA to 10µA

September 16, 2003 Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

1 Revision 1.0

September 2003

K6X1008T2D Family

CMOS SRAM

128Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM

FEATURES

• Process Technology: Full CMOS

• Organization: 128K x 8

• Power Supply Voltage: 2.7~3.6V

• Low Data Retention Voltage: 1.5V(Min)

• Three state outputs

• Package Type: 32-SOP-525, 32-TSOP1-0820F

32-SOP-525, 32-TSOP1-0820F

GENERAL DESCRIPTION

The K6X1008T2D families are fabricated by SAMSUNG′s

advanced CMOS process technology. The families support

verious operating temperature ranges and have various pack-

age types for user flexibility of system design. The families

also support low data retention voltage for battery back-up

operation with low data retention current.

PRODUCT FAMILY

Product Family Operating Temperature Vcc Range

Speed

Power Dissipation

Standby Operating

(ISB1, Max) (ICC2, Max)

K6X1008T2D-B

K6X1008T2D-F

Commercial(0~70°C)

Industrial(-40~85°C)

551)/702)/85ns

2.7~3.6V

6µA

20mA

K6X1008T2D-Q Automotive(-40~125°C)

702)/85ns

10µA

1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.

2. This parameter is measured with 30pF test load.

PKG Type

32-SOP-525

32-TSOP1-0820F

32-SOP-525

32-TSOP1-0820F

PIN DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

A16

A14

A12

I/O1

I/O2

I/O3

VSS

1 32

2 31

3 30

4 29

5 28

6 27

7 26

8 32-SOP 25

9 24

10 23

11 22

12 21

13 20

14 19

15 18

16 17

VCC

A15

CS2

A13

A11

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

A11

A13

CS2

A15

VCC

A16

A14

A12

32-TSOP

Type1-Forward

32 OE

31 A10

30 CS1

29 I/O8

28 I/O7

27 I/O6

26 I/O5

25 I/O4

24 VSS

23 I/O3

22 I/O2

21 I/O1

20 A0

19 A1

18 A2

17 A3

Clk gen.

Row

Addresses

Row

select

I/O1 Data

cont

I/O8

Data

cont

Name

A0~A16

CS1,CS2

I/O1~I/O8

Vcc

Vss

Function

Address Inputs

Write Enable Input

Chip Select Input

Output Enable Input

Data Inputs/Outputs

Power

Ground

No Connection

CS1

CS2 Control

WE logic

Precharge circuit.

Memory array

I/O Circuit

Column select

Column Addresses

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2 Revision 1.0

September 2003

PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Samsung semiconductor

( samsung )

K6X1008T2D-Q cmos

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[ K6X1008T2D-Q.PDF ]

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국내 전력반도체 판매점

상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743

일반적인 전자부품 판매점

디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14

K6X1008T2D-Q 반도체 회로 부품 판매점

128Kx8 bit Low Power CMOS Static RAM

국내 전력반도체 판매점

일반적인 전자부품 판매점

관련 데이터시트