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PDF TQM7M5012 Data sheet ( Hoja de datos )

Número de pieza TQM7M5012
Descripción 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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TQM7M5012
Advanced Data Sheet
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Functional Block Diagram
www.DataSheet4U.com
Features
Ultra-small 5x5mm form factor
GSM/EDGE Multi-Mode Capability
- 90 dBm Typical Rx Noise
- 38 dB Typical ACPR (200KHz)
- 66 dB Typical ACPR (400 KHz)
- 76 dB Typical ACPR (600 KHz)
1% Typical EVM rms
> 50 dB Typical Dynamic Range
GPRS Class 12
Internally Matched Input and Output
RoHS, MSL260C pending
Product Description
The TQM7M5012 is a ultra-small (5x5mm), GSM/EDGE Polar PAM
for handset applications. This module has been optimized for
excellent EDGE efficiency, Rx band noise performance, ACPR and
EVM in an open loop polar modulation environment at EDGE class
E2+ operation while maintaining high GSM/GPRS efficiency.
High reliability is assured by utilizing TriQuint’s 3rd generation
InGaP HBT technology and by TriQuint’s proven module design
techniques. The low profile, ultra-small package is enabled via
TriQuint’s CuFlipTM technology.
Electrical Specifications
Parameter
GSM Pout
Efficiency
Pin
EDGE Pout
Efficiency
Pin
850 Band
Typ
35
53
6
29
25
6
900 Band
Typ
34.7
55
6
29
25
6
DCS Band
Typ
33
49
6
28
25
6
PCS Band
Typ
32.5
50
6
28
26
6
Units
dBm
%
dBm
dBm
%
dBm
Applications
GSM/EDGE/WEDGE Handsets
GSM/EDGE/WEDGE Wireless Cards
Package Style
Top View
Package Size: LGA 5 x 5 x 1 mm
Advanced Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website: www.triquint.com
Revision H, January 25, 2008
1

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