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Número de pieza | MP4TD0770 | |
Descripción | Silicon Bipolar MMIC Cascadable Amplifier | |
Fabricantes | M-pulse Microwave | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MP4TD0770 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0770
Features
• Cascadable 50Ω Gain Block
• Low Operating Voltage (4.0 V Typical Vd)
• 3dB Bandwidth: DC to 1.5 GHz
• 11.6 dB Typical Gain @ 1.0 GHz
• Unconditionally Stable (k>1)
• Hermetic Gold-Ceramic Microstrip Package
• Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0770 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0770 is useful where a
general purpose 50Ω gain block with good noise figure
is required. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications.
Gold-Ceramic Microstrip Package Outline1,2
.040
1,02
4 GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
.004 ±.002
0,1 ±0,05
2 GND
.070
1,78
.035
0,89
The MP4TD0770 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
12
10 Id = 22mA
8
6
4
2
Gain Flat to D C
www.Da0taSheet4U.com
0.1
1
FREQUENCY (GH z)
10
.495 ±.030
12,57 ±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number
Pin Description
1 RF Input
2&4
AC/DC Ground
3 RF Output and DC Bias
Ordering Information
Model No.
MP4TD0770
MP4TD0770T
Package
Hermetic Ceramic
Tape and Reel
Electrical Specifications @ TA = +25°C, Id = 22 mA, Z0 = 50Ω
Symbol Parameters
Test Conditions
Gp
ΔGp
Power Gain (⏐S21⏐2)
Gain Flatness
f = 0.1 GHz
f = 0.1 to 1.0 GHz
f3 dB
3 dB Bandwidth
-
SWRin Input SWR
f = 0.1 to 1.5 GHz
SWRout Output SWR
f = 0.1 to 1.5 GHz
P1dB Output Power @ 1 dB Gain Compression f = 1.0 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
12.5
-
-
-
-
-
-
-
-
3.6
-
Typ.
13.5
±1.0
1.5
1.5
1.3
6.0
4.5
19.0
140
4.0
-7.0
Max.
14.5
±1.2
-
-
-
-
-
-
-
4.4
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MP4TD0770.PDF ] |
Número de pieza | Descripción | Fabricantes |
MP4TD0770 | Silicon Bipolar MMIC Cascadable Amplifier | M-pulse Microwave |
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