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PDF SST12LP07A Data sheet ( Hoja de datos )
| Número de pieza | SST12LP07A | |
| Descripción | High-Gain Power Amplifier | |
| Fabricantes | Silicon Storage Technology | |
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2.4 GHz High-Power, High-Gain Power Amplifier
A Microchip Technology Company
SST12LP07A
Data Sheet
The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. It is easily configured for high-power applications with excel-
lent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band
and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent
linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54
Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended
power detector, providing a reliable solution to board-level power control. The
SST12LP07A is offered in a 12-contact XQFN package.
Features
• High Gain:
– Typically 28 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm
– ~2.5% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~30.8%/220 mA @ POUT = 23.5 dBm for both 802.11g
and 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~70 mA ICQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 12-contact XQFN – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2012 Silicon Storage Technology, Inc.
www.microchip.com
DS75035B
05/12
1 page  
A Microchip Technology Company
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Electrical Specifications
Data Sheet
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 10 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pin 2 (PIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (POUT)1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
Supply Voltage at pins 4, 8, and 11 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pin 5 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (ICC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Table 2: Operating Range
Range
Industrial
Ambient Temp
-40°C to +85°C
VCC
3.3V
T2.1 75035
Table 3: DC Electrical Characteristics at 25°C
Symbol
VCC
ICC
ICQ
VREG
Parameter
Min.
Supply Voltage at pins 4, 8, 11
3.0
Supply Current
for 802.11g, 23.5 dBm
for 802.11b, 23.5 dBm
Idle current for 802.11g to meet EVM ~2.5% @ 20 dBm
Reference Voltage for, with 130 resistor
2.75
Typ Max.
3.3 4.2
220
220
70
2.85 2.95
Unit
V
mA
mA
mA
V
Test Conditions
T3.1 75035
©2012 Silicon Storage Technology, Inc.
5
DS75035B
05/12
5 Page 
A Microchip Technology Company
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Typical Performance Characteristics
Test Conditions: VCC = 3.3V, TA = 25°C, 1 Mbps 802.11b CCK Signal
Data Sheet
10
0
-10
-20
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
-30
-40
-50
-60
-70
-80
2.35
2.40 2.45 2.50
Frequency (GHz)
Figure 10:802.11b Spectrum Mask at 23.5 dBm, Total Current 220 mA
2.55
©2012 Silicon Storage Technology, Inc.
11
DS75035B
05/12
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet SST12LP07A.PDF ] | |
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