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PDF 2SK3390 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3390 | |
| Descripción | Silicon N Channel MOS FET UHF Power Amplifier | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3390 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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2SK3390
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz)
• Compact package capable of surface mounting
Outline
RP8P
1
G
Note: Marking is “IX”.
D
3
2
S
1
3
2
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
ADE-208-846 (Z)
1st. Edition
Aug.2001
1. Gate
2. Source
3. Drain
1 page  
Reverse Transfer Capacitance vs.
Drain to Gate Votage
10
3
1
0.3
V GS = 0
f = 1 MHz
0.1
0.1 0.3 1 3
10 30
Drain to Gate Voltege VDG (V)
2SK3390
Output Power, Added Efficiency vs.
Input Power
10 100
Pout
8 80
6 ηadd 60
4 40
2 V DS = 13.7 V 20
I DO = 0.25 A
f = 836 MHz
00
0 50 100 150 200 250
Input power Pin (mW)
Rev.0, Aug. 2001, page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK3390.PDF ] | |
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