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Elite |
A44
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE AMPLIFIER
Collector-Emitter Voltage: VCEO=400V
Collector Dissipation: PC(max)=625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO 400 V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO 5 V
Collector Current
IC 200 mA
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
TSTG
625
150
-55~+150
mW
oC
oC
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC= 100µA, IE= 0
IC= 1mA, IB= 0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
BVEBO
ICBO
ICEO
IEBO
IE= 10µA, IC= 0
VCB= 300V, IE= 0
VCE= 400V, IB= 0
VEB= 4V, IC= 0
DC Current Gain
hFE(1) VCE= 10V, IC= 10mA
hFE(2)
hFE(3)
VCE= 10V, IC= 1mA
VCE= 10V, IC= 100mA
Collector-Emitter Saturation Voltage
VCE(sat) IC= 10mA, IB= 1mA
Collector-Emitter Saturation Voltage
VCE(sat) IC= 50mA, IB= 5mA
Base-Emitter Saturation Voltage
VBE(sat) IC= 10mA, IB= 1mA
Transition Frequency
fT VCE= 5V, IC= 10mA
f= 30MHz
Min Max Unit
400 V
400 V
5V
0.1 µA
5 µA
0.1 µA
80 300
70
60
0.2 V
0.3
0.75 V
50 MHz
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No.: A44
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