Datasheet ZXTNS618MCTA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	ZXTNS618MCTA	20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION Features and Benefits NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up Schottky Diode • BVR > 40V • IFAV = 3A Ave	Diodes	transistor

ZXT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	ZXT1053AK	75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f	Zetex Semiconductors	transistor
2	ZXT1053AKTC	75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f	Zetex Semiconductors	transistor
3	ZXT10N15DE6	15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N15DE6 SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.	Zetex Semiconductors	transistor
4	ZXT10N20DE6	20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N20DE6 SuperSOT™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses	Zetex Semiconductors	transistor
5	ZXT10N50DE6	50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N50DE6 SuperSOT™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.	Zetex Semiconductors	transistor
6	ZXT10P12DE6	12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P12DE6 SuperSOT™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses	Zetex Semiconductors	transistor
7	ZXT10P20DE6	20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P20DE6 SuperSOT™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state loss	Zetex Semiconductors	transistor

Esta página es del resultado de búsqueda del ZXTNS618MCTA. Si pulsa el resultado de búsqueda de ZXTNS618MCTA se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap