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Datasheet ZXMS6004SGQTA Equivalent ( PDF )

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1 ZXMS6004SGQTA   60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary  Continuous Drain Source Voltage VDS= 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.3A  Clamping Energy 480mJ Description The ZXMS6004SGQ is a
 Diodes
Diodes		 datasheet ZXMS6004SGQTA pdf

ZXMS6004SG Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
ZXMS6004SGQTA

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary  Continuous Drain Source Voltage VDS= 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.3A  Clamping Energy 480mJ Description
Diodes
Diodes		 datasheet pdf - Diodes
ZXMS6004SGTA

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION   Green ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary • Continuos Drain Source Voltage • On-State Resistance • Nominal Load Current (VIN = 5V) • Clamping Energy 60V 500mΩ 1.3A 480mJ Description T
 Diodes
Diodes		 datasheet pdf - Diodes
ZXMS6004SGQ

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary  Continuous Drain Source Voltage VDS= 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.3A  Clamping Energy 480mJ Description
Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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