|
ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMP6A17N8 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -60V RDS(on) 125mΩ @ VGS = -10V 190mΩ @ VGS = -4.5V ID TA = 25°C -3.4A -2.8A Description and Applications This MOSFET has been designed to minimize the on-stat
A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -60V RDS(on) 125mΩ @ VGS= -10V 190mΩ @ VGS= -4.5V ID TA = 25°C -6.6A -5.3A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistan
ADVANCE INFORMATION Product Summary V(BR)DSS -60V RDS(on) Max 125mΩ @ VGS = -10V 190mΩ @ VGS = -4.5V ID Max TA = +25°C (Note 7) -3.0 A -2.4 A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high ef
ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP6A17E6 SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switchi
ZXMP6A17DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.1A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switc
ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMP6A17N8 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -60V RDS(on) 125mΩ @ VGS = -10V 190mΩ @ VGS = -4.5V ID TA = 25°C -3.4A -2.8A Description and Applications This MOSFET has been designed to minimize the on-stat
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |