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Datasheet ZXMP4A57E6QTA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 ZXMP4A57E6QTA   40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS -40V RDS(ON) max 80mΩ @ VGS= -10V 150mΩ @ VGS= -4.5V ID max TA = +25°C -3.7 A -2.8 A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power
Diodes
Diodes
datasheet ZXMP4A57E6QTA pdf

ZXMP4A57E6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
ZXMP4A57E6QTA

40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS -40V RDS(ON) max 80mΩ @ VGS= -10V 150mΩ @ VGS= -4.5V ID max TA = +25°C -3.7 A -2.8 A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for h
Diodes
Diodes
datasheet pdf - Diodes
ZXMP4A57E6

40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS -40V RDS(ON) max 80mΩ @ VGS= -10V 150mΩ @ VGS= -4.5V ID max TA = +25°C -3.7 A -2.8 A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for h
Diodes
Diodes
datasheet pdf - Diodes
ZXMP4A57E6TA

40V P-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS -40V RDS(ON) max 80mΩ @ VGS= -10V 150mΩ @ VGS= -4.5V ID max TA = +25°C -3.7 A -2.8 A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for h
Diodes
Diodes
datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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