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A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS RDS(on) 350mΩ @ VGS= -10V -100V 450mΩ @ VGS= -6.0V ID TA = 25°C -3.9A -3.4A Features and Benefits • • • • Fast s
ZXMP10A17GQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -100V RDS(ON) max 350mΩ @ VGS = -10V 450mΩ @ VGS = -6V ID TA = +25°C -2.4A -2.1A Features and Benefits Fast Switching Speed Low Input Capacitance Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (
ADVANCE INFORMATION ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -100V RDS(ON) 350mΩ @ VGS= -10V 450mΩ @ VGS= -6.0V ID TA = +25°C -1.6A -1.4A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching perform
ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency
ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -100V: RDS(ON) = 0.350 ; ID = -1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for hi
ZXMP10A13FQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -100V Max RDS(ON) Package 1.0 @ VGS= -10V 1.45 @ VGS= -6.0V SOT23 Max ID TA = +25°C -0.7A -0.5A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications.
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