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ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V : RDS(on)=0.040⍀; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for hig
A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(on) 80mΩ @ VGS= 10V 150mΩ @ VGS= 4.5V ID TA = 25°C 7.90A 5.75A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (
ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.080 @ VGS = 10V 0.150 @ VGS = 4.5V ID (A) 5.3 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fas
ADVANCE INFORMATION Product Summary V(BR)DSS 60V RDS(ON) 80mΩ @ VGS=10V 150mΩ @ VGS=4.5V ID TA = +25°C 3.5A 2.5A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management app
Product Summary V(BR)DSS 60V Max RDS(ON) 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = +25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power managemen
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.040 @ VGS= 10V 0.060 @ VGS= 4.5V ID (A) 5.6 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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