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Datasheet ZXMN3A01F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ZXMN3A01F | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.12 ID=2.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, |
 Zetex Semiconductors |
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| 3 | ZXMN3A01F | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION
ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) 0.12Ω @ VGS = 10V
ID TA = +25°C
2.0A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance |
 Diodes |
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| 2 | ZXMN3A01FTA | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION
ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) 0.12Ω @ VGS = 10V
ID TA = +25°C
2.0A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance |
Diodes |
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| 1 | ZXMN3A01FTC | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION
ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) 0.12Ω @ VGS = 10V
ID TA = +25°C
2.0A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance |
Diodes |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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