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A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) 85mΩ @ VGS = 10V 100mΩ @ VGS = 6V ID TA = 25°C 7.7A 7.1A Features and Benefits • Low input capacitance • Low on-resistance • Fast switching speed • “Gree
A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) 85mΩ @ VGS = 10V 100mΩ @ VGS = 6V ID TA = 25°C 7.7A 7.1A Features and Benefits • Low input capacitance • Low on-resistance • Fast switching speed • “Gree
NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching,
ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high effic
ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 1 ID= 1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficie
NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching,
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