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ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2
ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2
Coaxial Directional Coupler 50Ω Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C ! NEW ZX30-17-5 5 to 2000 MHz Features • • • • very flat coupling very broad, multi-octave all welded construction protected by U.S. Patent 6140887 & 6784531 CASE
Coaxial Directional Coupler 50Ω Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C ZX30-20-4 5 to 1000 MHz Features • • • • very flat coupling very broad, multi-octave all welded construction protected by U.S. Patent 6,140,887
ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2
ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2
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