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ZX3.9 전자부품 데이터시트



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기능 검색 결과



ZX3.9  

Diotec Semiconductor
Diotec Semiconductor

ZX3.9

Silicon-Power-Z-Diodes (non-planar technology)

ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 3




관련 부품 ZX3 상세설명

ZX39  

  
Silicon-Power-Z-Diodes (non-planar technology)

ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2



Diotec Semiconductor
Diotec Semiconductor

PDF



ZX33  

  
Silicon-Power-Z-Diodes (non-planar technology)

ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2



Diotec Semiconductor
Diotec Semiconductor

PDF



ZX30-17-5  

  
Directional Coupler 50 5 to 2000 MHz

Coaxial Directional Coupler 50Ω Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C ! NEW ZX30-17-5 5 to 2000 MHz Features • • • • very flat coupling very broad, multi-octave all welded construction protected by U.S. Patent 6140887 & 6784531 CASE



Mini-Circuits
Mini-Circuits

PDF



ZX30-20-4  

  
Coaxial Directional Coupler

Coaxial Directional Coupler 50Ω Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C ZX30-20-4 5 to 1000 MHz Features • • • • very flat coupling very broad, multi-octave all welded construction protected by U.S. Patent 6,140,887



Mini-Circuits
Mini-Circuits

PDF



ZX30  

  
Silicon-Power-Z-Diodes (non-planar technology)

ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2



Diotec Semiconductor
Diotec Semiconductor

PDF



ZX36  

  
Silicon-Power-Z-Diodes (non-planar technology)

ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse 30 10 12.5 W 3.9…200 V DO-4 5.5 g Ø2



Diotec Semiconductor
Diotec Semiconductor

PDF




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