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Datasheet ZVP3310 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ZVP3310 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=20Ω
ZVP3310A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operati |
 Zetex Semiconductors |
 |
| 3 | ZVP3310 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=20Ω
ZVP3310A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operati |
Zetex Semiconductors |
|
| 2 | ZVP3310A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=20Ω
ZVP3310A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operati |
Zetex Semiconductors |
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| 1 | ZVP3310F | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20Ω COMPLEMENTARY TYPE PARTMARKING DETAIL 7
ZVP3310F
D S
ZVN3310F MR
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Curre |
Zetex Semiconductors |
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