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Datasheet YMP7N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | YMP7N60 | N-Channel Enhancement Mode Power MOSFET YMP7N60
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Product Summary
BVDSS typ. RDS(O |  YM | mosfet |
YMP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | YMP120N06 | N-Channel Enhancement Mode Power MOSFET YMP120N06
N-Channel
Enhancement Mode Power MOSFET
Features
● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ；
● Low gate charge ● Low Crss (typical 197pF) ● Fast switching ● 100% avalanche tested ● Improved dv/dt capability ● Rohs product
Product Summary
BVDSS typ. RDS(O YM mosfet | | |
| 2 | YMP230N55 | N-Channel Enhancement Mode Power MOSFET YMP230N55
N-Channel Enhancement Mode Power MOSFET
Product Summary
BVDSS RDS(ON) typ. typ. max. ID 55 2 3 230 V mΩ mΩ A
General Description
The YMP230N55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swi YM mosfet | | |
| 3 | YMP7N60 | N-Channel Enhancement Mode Power MOSFET YMP7N60
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Product Summary
BVDSS typ. RDS(O YM mosfet | |
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