|
17.0-25.0 GHz GaAs MMIC Power Amplifier February 2007 - Rev 05-Feb-07 P1022-BD Chip Device Layout Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power
17.0-22.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1021-BD Chip Device Layout XP1021-BD Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2
17.0-24.0 GHz GaAs MMIC Power Amplifier July 2006 - Rev 30-Jul-06 P1019-BD Chip Device Layout Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspec
37.0-42.0 GHz GaAs MMIC Power Amplifier February 2007 - Rev 01-Feb-07 P1018-BD Chip Device Layout Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-
35.0-45.0 GHz GaAs MMIC Power Amplifier October 2005 - Rev 21-Oct-05 P1018 Chip Device Layout Features Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
30.0-36.0 GHz GaAs MMIC Power Amplifier January 2010 - Rev 23-Jan-10 P1017-BD Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testi
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |