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Datasheet XN5601 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | XN5601 | Silicon PNP epitaxial planer transistor Composite Transistors
XN5601
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
For general amplification
0.65±0.15
2.8 –0.3
+0.2 +0.25
1.5 –0.05 6
0.65±0.15 1
0.3 –0.05
0.5 –0.05
0.95
2.9 –0.05
q q
Two elements incorporated i |  Panasonic Semiconductor | transistor |
XN5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | XN5501 | Silicon NPN epitaxial planer transistor
Composite Transistors
XN05501 (XN5501)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification ■ Features
• Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
4
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) Panasonic Semiconductor transistor | | |
| 2 | XN5501 | Silicon NPN epitaxial planar type
Composite Transistors
XN05501 (XN5501)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification ■ Features
• Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
4
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) Panasonic Semiconductor data | | |
| 3 | XN5531 | Silicon NPN epitaxial planer transistor
Composite Transistors
XN05531 (XN5531)
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.10 –0.06
G
3
2
1
(0.65)
0.30+0.10 –0.05 0.50+0.10 � Panasonic Semiconductor transistor | | |
| 4 | XN5531 | Silicon NPN epitaxial planer transistor
Composite Transistors
XN05531 (XN5531)
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.10 –0.06
G
3
2
1
(0.65)
0.30+0.10 –0.05 0.50+0.10 � Panasonic Semiconductor transistor | | |
| 5 | XN5553 | Silicon NPN epitaxial planer transistor Composite Transistors
XN5553
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of the low frequency
0.65±0.15
2.8 –0.3
+0.2 +0.25
1.5 –0.05 6
0.65±0.15 1
0.3 –0.05
0.5 –0.05
0.95
2.9 –0.05
q q
Two elements incorporated into one package. Reduction of the mount Panasonic Semiconductor transistor | | |
| 6 | XN5601 | Silicon PNP epitaxial planer transistor Composite Transistors
XN5601
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
For general amplification
0.65±0.15
2.8 –0.3
+0.2 +0.25
1.5 –0.05 6
0.65±0.15 1
0.3 –0.05
0.5 –0.05
0.95
2.9 –0.05
q q
Two elements incorporated i Panasonic Semiconductor transistor | |
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