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Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . .
N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actu
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 / 3N191 FEATURES CORPORATION • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Vo
X3DIL AVR USB Module Rev. 1.0 Documentation Rev. 1 Reusch Elektronik © 2012 Reusch Elektronik, Dipl.-Ing. (FH) Rainer Reusch www.reusch-elektronik.de http://products.reworld.eu/x3dil.htm File: X3DIL_Manual Created: 2012-05-10 Changed: Free Datasheet http:// Table of Contents
APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS Preliminary Information Preliminary X3100/X3101 FEATURE • Software Selectable Protection Levels and Variable Protect Detection/Release Times • Integrated FET Drive Circuitry • Cell Voltage and Current Monitoring • 0.5% Ac
` Model X3C25F1-03S Prelim PRELIMINARY Hybrid Coupler 3 dB, 90 Description The X3C25F1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for LTE, WIMAX applications. The X3C25F1-03S is designed particularl
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