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WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive *
WTC2310 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
WTC2309 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 Features: 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m Ω@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *S
WTC2308 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-2
WTC2307 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.0 AMPERS DRAIN SOUCE VOLTAGE -16 VOLTAGE Features: SOURCE 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Pac
WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Packag
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