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Datasheet WSB5557Z Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | WSB5557Z | Schottky Barrier Diode WSB5557Z
Schottky Barrier Diode
Features
100mA Average rectified forward current Low forward voltage Ultra-low leakage current Small package DFN0603-2L
Applications
Low Current rectification
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) | WillSEMI | diode |
WSB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | WSB06200AT | High Voltage Power Schottky Rectifier WSB06200AT
High Voltage Power Schottky Rectifier
Features:
*Plastic Package Has Underwriters Laboratory Flammability Classifications 94V-0. *Metal Silicon Junction, Majority Carrier Conduct. *Low Reverse Leakage Current. *Avalanche Capability Specified
HIGH VOLTAGE SCHOTTKY 6 AMPERES 200 VOLTS
2&
Weitron rectifier | | |
2 | WSB10100T | Schottky Barrier Diode WSB10100T
Power Schottky Barrier Rectifier
Features
WSB10100T
Http://www.sh-willsemi.com
2x5A average rectified forward current Low forward voltage and Low leakage current Excellent high junction temperature stability High forward surge capability
TO-220
Applications
Circuit
� WillSEMI diode | | |
3 | WSB1151 | PNP EPITAXIAL SILICON TRANSISTOR WSB1151
PNP EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT AMPLIFIER
◇ Low Collector Saturation Voltage ◇ Complement to WSD1691
WR0459
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse) Collecto Wooseok transistor | | |
4 | WSB20100T | Schottky Barrier Diode WSB20100T/WSB20100TF
Power Schottky Barrier Rectifier
Features
2x10A average rectified forward current Low forward voltage and Low leakage current Excellent high junction temperature stability High forward surge capability
Applications
High frequency switch model power supplies � WillSEMI diode | | |
5 | WSB20100TF | Schottky Barrier Diode WSB20100T/WSB20100TF
Power Schottky Barrier Rectifier
Features
2x10A average rectified forward current Low forward voltage and Low leakage current Excellent high junction temperature stability High forward surge capability
Applications
High frequency switch model power supplies � WillSEMI diode | | |
6 | WSB20L100T | Schottky Barrier Diode WSB20L100T
Power Schottky Barrier Rectifier
WSB20L100T
www.sh-willsemi.com
Features
2x10A average rectified forward current Low forward voltage and Low leakage current High Junction temperature High forward and reverse Surge capability
Circuit
Applications
High frequency swit WillSEMI diode | | |
7 | WSB20L100TF | Schottky Barrier Diode WSB20L100T/ WSB20L100TF
Power Schottky Barrier Rectifier
Features
2x10A average rectified forward current Low forward voltage and Low leakage current High Junction temperature High forward and reverse Surge capability
WSB20L100T/WSB20L100TF
www.sh-willsemi.com
Circuit
WSB 20L100 T WillSEMI diode | |
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Número de pieza | Descripción | Fabricantes | |
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