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WPM3015 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Typical Rds(on)(Ω ) 0.063@ VGS=-10V 0.091@ VGS=-4.5V WPM3015 www.sh-willsemi.com Descriptions The WPM3015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON
WPM3022 Single P-Channel, -30V, -3.1A, Power MOSFET WPM3022 Http://www.sh-willsemi.com VDS (V) -30 Typical RDS(on) (mΩ) 56 @ VGS=-10V 77 @ VGS=-4.5V Descriptions The WPM3022 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD
WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.053@ VGS=̢10.0V 0.053@ VGS=̢10.0V 0.079@ VGS=̢4.5V 0.079@ VGS=̢4.5V WPM3004 Http//:www.willsemi.com Descriptions The WPM3004 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology a
WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET WPM3005 Http://www.sh-willsemi.com VDS (V) -30 Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V 0.083@ VGS=̢4.5V 0.083@ VGS=̢4.5V Descriptions The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology
WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V Descriptions The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device
WPM3023 Single P-Channel, -30V, -3.9A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 37 @ VGS=-10V 50 @ VGS=-4.5V WPM3023 Http://www.sh-willsemi.com Descriptions The WPM3023 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
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