WPM2031 전자부품 데이터시트

WPM2009D -20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited

WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Mo

WPM2080 Single P-Channel, -20V, -4.0A, Power MOSFET VDS (V) -20 Typical RDS(on) (mΩ) 43 @ VGS=-4.5V 55 @ VGS=-2.5V WPM2080 Http://www.sh-willsemi.com Descriptions The WPM2080 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R

WPM2005 WPM2005 Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushl

WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET VDS (V) Typical Rds(on) (Ω) 0.017@ VGS=-4.5V -20 0.022@ VGS=-2.5V 0.032@ VGS=-1.8V ESD Rating: 4000V HBM Descriptions The WPM2065 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellen

WPM2037 Single P-Channel, -20V, -3.6A , Power MOSFET VDS (V) -20 Rds(on) (ȍ) 0.047@ VGS=̢4.5V 0.060@ VGS=̢2.5V 0.076@ VGS=̢1.8V WPM2037 Http//:www.willsemi.com Descriptions The WPM2037 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provid