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WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET VDS (V) -12 Rds(on) (Ω) 0.015@ VGS=–4.5V 0.020@ VGS=–2.5V 0.030@ VGS=–1.8V Descriptions The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low
WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V Descriptions The WPM1483 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) wi
WPM1488 Single P-Channel, -12V, -1.4A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.080@ VGS=–4.5V 0.086@ VGS=–3.6V 0.105@ VGS=–2.5V ID (A) -1.2 -1.0 -1.0 Descriptions The WPM1488 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide
WPM1481 Single P-Channel, -12V, -5.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.022@ VGS=-4.5V 0.030@ VGS=-2.5V 0.045@ VGS=-1.8V ID (A) -5.5 -4.0 -2.5 Descriptions The WPM1481 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide exce
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