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WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD
WNMD2155 WNMD2155 Dual N-Channel, 20V, 7.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) (ȍ) 0.018@ VGS=10V 0.020@ VGS=4.5V 20 0.025@ VGS=2.5V 0.031@ VGS=1.8V Descriptions The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and des
WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low ga
WNMD2157 Dual N-Channel, 20V, 5.4A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.019@ VGS=4.5V 0.024@ VGS=2.5V 0.034@ VGS=1.8V WNMD2157 Http//:www.willsemi.com Descriptions Package The WNMD2157 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provi
WNMD2156 Dual N-Channel, 20V, 6.5A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.019@ VGS=10V 0.021@ VGS=4.5V 0.025@ VGS=2.5V 0.033@ VGS=1.8V Descriptions The WNMD2156 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with
WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V ID (A) 4.0 2.5 2.0 WNMD2166 Http//:www.willsemi.com Descriptions The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and desig
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