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Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V SOT-23 Descriptions D The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low
WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V WNM3008 Http//:www.willsemi.com Descriptions The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with l
WNM3011 N-Channel, 30V, 5.7A, Power MOSFET WNM3011 Http://www.willsemi.com V(BR)DSS 30V Rds(on) () 0.028@ 10V 0.039@ 4.5V Descriptions The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge
WNM3003 N-Channel, 30V, 4.0A, Power MOSFET WNM3003 Http://www.willsemi.com V(BR)DSS 30V Rds(on) () 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V Descriptions The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low
WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) wit
WNM3013 Small Signal N-Channel, 30V, 0.10A, MOSFET WNM3013 Http://www.willsemi.com Descriptions The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in sma
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