Datasheet WNM3013 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WNM3013	N-Channel MOSFET WNM3013 Small Signal N-Channel, 30V, 0.10A, MOSFET WNM3013 Http://www.willsemi.com Descriptions The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in sma	Will Semiconductor

WNM3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WNM3003	N-Channel MOSFET Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V(BR)DSS Rds(on) () 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V SOT-23 30V Descriptions The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent	TY Semiconductor
WNM3017	MOSFET ( Transistor ) WNM3017 Single N-Channel, 30V, 6.2A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 17 @ VGS=10V Descriptions The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This de	WillSEMI
WNM3025	MOSFET ( Transistor ) WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 Http://www.sh-willsemi.com G S D Descriptions The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to	WillSEMI

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Número de pieza	Descripción	Fabricantes	PDF
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