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WNM3011 전자부품 데이터시트



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WNM3011  

Will Semiconductor
Will Semiconductor

WNM3011

N-Channel MOSFET

WNM3011 N-Channel, 30V, 5.7A, Power MOSFET WNM3011 Http://www.willsemi.com V(BR)DSS 30V Rds(on) (Ÿ) 0.028@ 10V 0.039@ 4.5V Descriptions The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide




관련 부품 WNM30 상세설명

WNM3008  

  
N-Channel MOSFET

Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V SOT-23 Descriptions D The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low



TY Semiconductor
TY Semiconductor

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WNM3008  

  
N-Channel MOSFET

WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V WNM3008 Http//:www.willsemi.com Descriptions The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with l



Will Semiconductor
Will Semiconductor

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WNM3003  

  
N-Channel MOSFET

WNM3003 N-Channel, 30V, 4.0A, Power MOSFET WNM3003 Http://www.willsemi.com V(BR)DSS 30V Rds(on) (Ÿ) 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V Descriptions The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low



Will Semiconductor
Will Semiconductor

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WNM3018  

  
MOSFET ( Transistor )

WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) wit



WillSEMI
WillSEMI

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WNM3013  

  
N-Channel MOSFET

WNM3013 Small Signal N-Channel, 30V, 0.10A, MOSFET WNM3013 Http://www.willsemi.com Descriptions The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in sma



Will Semiconductor
Will Semiconductor

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WNM3025  

  
MOSFET ( Transistor )

WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 Http://www.sh-willsemi.com G S D Descriptions The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD



WillSEMI
WillSEMI

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