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WNM2034 N-Channel, 20V, 3.6A, Power MOSFET WNM2034 Http://www.willsemi.com VDS (V) 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions The WNM2034 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V WNM2020 Http//:www.willsemi.com Descriptions SOT-23 The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provid
WNM2029 Single N-Channel, 20V, 1.85A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.072@ VGS=4.5V 0.088@ VGS=2.5V 0.115@ VGS=1.8V ID (A) 1.8 1.5 1.0 WNM2029 Http//:www.willsemi.com Descriptions The WNM2029 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and desig
WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V Descriptions The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
WNM2072 WNM2072 Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V Http://www.sh-willsemi.com G S D DFN1006-3L The WNM2072 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced tren
Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions The WNM2034 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) SOT-23 D 3 with low gate char
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