WGW15G120N
Winsemi
Low Loss IGBTFeatures
■ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=100℃ ■ low Gate charge(Typ.= 85nC) ■ NPT Technology, Positive temperature coefficient ■ Low EMI
■ Pb-free lead plating; RoHS compliant
WGW15G120N
Low Loss IGBT
Applications
■ General purpose
WGW15G120
Low Loss IGBTWGW15G120
Low Loss IGBT
Features
15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=25℃ low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMI Pb-free lead plating; RoHS compliant
Applications
General purpose inverter Frequency converters Induction
WINSEMI SEMICONDUCTOR
PDF
WGW15G120W
Low Loss IGBTFeatures
■ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=100℃ ■ low Gate charge(Typ.= 85nC) ■ NPT Technology, Positive temperature coefficient ■ Low EMI ■ Pb-free lead plating; RoHS compliant
Applications
■ General purpose inverter ■ Frequency converters ■ Induction Heating(IH) ■ Uni
Winsemi
PDF