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WFU5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is pr
HIGH VOLTAGE N-Channel MOSFET WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10
Datasheet pdf - http://www.DataSheet4U.net/ www.partnumber.co.kr WFU5N60 Silicon N-Channel MOSFET Features � � � � � 4.5A,600V,RDS(on)(Max2.5Ω)@VGS=10V Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General
Datasheet pdf - http://www.DataSheet4U.net/ www.partnumber.co.kr B WFU5N60 5N60B Silicon N-Channel MOSFET Features � � � � � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
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