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WFF8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Descrip
Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFF8N65B Silicon N-Channel MOSFET General Description This Power MOS
HIGH VOLTAGE N-Channel MOSFET WFF8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (Max) @VG=10V □ 100%
WFF8N65L Product Description Silicon N-Channel MOSFET Features � 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 24nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This P
www.DataSheet.in WFF8N60 Silicon N-Channel MOSFET Features � � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃) General Descriptio
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