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WFF8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Descrip
WFF8N60C Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usin
Datasheet pdf - http://www.DataSheet4U.net/ www.partnumber.co.kr WFF840B Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General
Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFF8N65B Silicon N-Channel MOSFET General Description This Power MOS
Wisdom Semiconductor WFF8N80 N-Channel MOSFET Features ■ RDS(on) (Max 1.6 Ω )@VGS=10V ■ Gate Charge (Typical 39nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using
Wisdom Semiconductor WFF840 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.85 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ● 1.
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