|
Wisdom Semiconductor WFF740 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.55 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ● 1.
WFF7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, mak
WFF7N65L Product Description Silicon N-Channel MOSFET Features � 7A,650V,RDS(on)(Max1.38Ω)@VGS=10V � Low Crss (typical 15pF ) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This P
Wisdom Semiconductor WFF7N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● ■ ■ ■ 1.
Wisdom Semiconductor WFF7N65 N-Channel MOSFET Features ■ RDS(on) (Max 1.4 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |