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HIGH VOLTAGE N-Channel MOSFET WFF5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 10
Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFF5N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advan
WFF5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This
www.DataSheet.in WFF5N60 Silicon N-Channel MOSFET Features ■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using
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