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Datasheet WFF4N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | WFF4N60 | Silicon N-Channel MOSFET Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFF4N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET |
 Winsemi |
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| 2 | WFF4N60 | N-Channel MOSFET Wisdom Semiconductor
WFF4N60
N-Channel MOSFET
Features
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RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
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 Wisdom technologies |
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| 1 | WFF4N60C | Silicon N-Channel MOSFET Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFF4N60C
Silicon N-Channel MOSFET
General Description
This Power MOSFE |
Winsemi |
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