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Datasheet WFF2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | WFF2N60 | Power MOSFET ( Transistor ) WFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSF |
 Winsemi |
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| 2 | WFF2N60 | N-Channel MOSFET Wisdom Semiconductor
WFF2N60
N-Channel MOSFET
Features
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RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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2. Drain
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 Wisdom technologies |
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| 1 | WFF2N60B | Power MOSFET ( Transistor ) WFF2N60B Product Description
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced usi |
Winsemi |
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