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VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A TO-220AB TMBS ® TO-262AA K VT3045C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VIT3045C 3 2 1 PIN 1 PIN 2 PIN 3
ONLINE DATA SHEET www.mysick.com Photoelectric sensors V180-2, Photoelectric proximity sensor, Background suppression VTB180-2F32417 Photoelectric sensors V180-2, Photoelectric proximity sensor, Background suppression Type Part No. > VTB180-2F32417 > 6044020 At a glance • Detecting presence a
Three Phase Rectifier Bridge VVZ 70 VVZF 70 VTO 70 VTOF 70 IdAV = 70 A VRRM = 800-1600 V Preliminary data VRSM VDSM V 800 1200 1400 1600 VRRM VDRM V 800 1200 1400 1600 Type A 2 31 2 31 A CC DD EE VVZ 70 B xxx 70-08io7 xxx 70-12io7 A 2 31 xxx 70-14io7 xxx 70-16io7 C D E C D E 5 46 xx
VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch (mm) CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt res
VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of res
GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package — 880 nm VTE1295 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED ch
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