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Datasheet VS-GT100TP120N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | VS-GT100TP120N | Half Bridge IGBT Power Module www.vishay.com
VS-GT100TP120N
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
INT-A-PAK
FEATURES
• Low VCE(sat) trench IGBT technology • 10 μs short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C • Low indu |
Vishay |
VS-GT100TP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
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VS-GT100TP120N | Half Bridge IGBT Power Module |
Vishay |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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