|
VS-50WQ03FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A Base cathode 4, 2 D-PAK (TO-252AA) 1 Anode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D-PAK (TO-252AA) 5.5 A 30 V See Electrical table 58 mA at 125 °C 150 °C Single die 10 mJ MAJOR RATINGS
VS-50WQ03FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A Base cathode 4, 2 D-PAK (TO-252AA) 1 Anode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D-PAK (TO-252AA) 5.5 A 30 V See Electrical table 58 mA at 125 °C 150 °C Single die 10 mJ MAJOR RATINGS
VS-50SQ... Series, VS-50SQ...-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
VS-50SQ... Series, VS-50SQ...-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
VS-50SQ... Series, VS-50SQ...-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
VS-50SQ... Series, VS-50SQ...-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |