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VG36646141BT-8  

Vanguard International Semiconductor
Vanguard International Semiconductor

VG36646141BT-8

CMOS Synchronous Dynamic RAM

VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a sing




관련 부품 VG36646141BT 상세설명

VG36646141BT-7  

  
CMOS Synchronous Dynamic RAM

VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is package



Vanguard International Semiconductor
Vanguard International Semiconductor

PDF



VG36646141BT-10  

  
CMOS Synchronous Dynamic RAM

VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is package



Vanguard International Semiconductor
Vanguard International Semiconductor

PDF




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