VG36643241BT-8
Vanguard International Semiconductor
CMOS Synchronous Dynamic RAMVIS
Description
Preliminary
VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanc
VG36643241BT-7
CMOS Synchronous Dynamic RAMVIS
Description
Preliminary
VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designe
Vanguard International Semiconductor
PDF
VG36643241BT-10
CMOS Synchronous Dynamic RAMVIS
Description
Preliminary
VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designe
Vanguard International Semiconductor
PDF