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VG3617161ET 전자부품 데이터시트



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VG3617161ET  

Vanguard International Semiconductor
Vanguard International Semiconductor

VG3617161ET

CMOS Synchronous Dynamic RAM

VIS Description VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate fro




관련 부품 VG3617161 상세설명

VG3617161BT  

  
16Mb CMOS Synchronous Dynamic RAM

VIS Description VG3617161BT 16Mb CMOS Synchronous Dynamic RAM The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately d



ETC
ETC

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VG3617161DT  

  
16Mb CMOS Synchronous Dynamic RAM

VIS Description Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is



Vanguard International Semiconductor
Vanguard International Semiconductor

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