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www.vishay.com VBT1045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 VBT1045CBP PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Low forward volta
www.partnumber.co.kr New Product VBT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • Hi
New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL leve
New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL leve
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PartNumber.co.kr | 2020 | 연락처 |